Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer

Beom Yong Kim, Hyeon Woo Park, Seung Dam Hyun, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Deok-Yong Cho, Min Hyuk Park,* and Cheol Seong Hwang*